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CY7C1480BV25-200BZXC: A Comprehensive Guide to Static Random Access Memory (SRAM)

Overview

The CY7C1480BV25-200BZXC is a high-performance, low-power Static Random Access Memory (SRAM) chip from Cypress Semiconductor. It is organized as 16-Mbits (2 Megabytes) by 8-bits, providing a total storage capacity of 2,097,152 bits. The SRAM features a fast access time of 25 nanoseconds (ns) and operates at a low voltage of 2.5 volts (V).

Key Features

  • 16-Mbit (2 Megabyte) by 8-bit organization
  • Fast access time of 25 ns
  • Low operating voltage of 2.5 V
  • Industry-standard 44-pin TSOP-II package
  • RoHS compliant
  • AEC-Q100 qualified

Applications

The CY7C1480BV25-200BZXC is suitable for a wide range of applications, including:

  • Automotive electronics
  • Industrial automation
  • Networking equipment
  • Medical devices
  • Consumer electronics

Benefits

The CY7C1480BV25-200BZXC offers several benefits over traditional SRAM chips:

CY7C1480BV25-200BZXC

CY7C1480BV25-200BZXC

  • High performance: The fast access time and low operating voltage make the CY7C1480BV25-200BZXC ideal for high-speed applications.
  • Low power consumption: The CY7C1480BV25-200BZXC's low operating voltage and advanced power management features help to reduce power consumption.
  • Compact design: The CY7C1480BV25-200BZXC's compact 44-pin TSOP-II package makes it easy to integrate into space-constrained designs.

Specifications

Parameter Value
Organization 16-Mbit (2 Megabyte) by 8-bit
Access time 25 ns
Operating voltage 2.5 V
Power consumption 200 mA (active)
Package 44-pin TSOP-II

Pinout

The CY7C1480BV25-200BZXC has a standard 44-pin TSOP-II package with the following pinout:

CY7C1480BV25-200BZXC: A Comprehensive Guide to Static Random Access Memory (SRAM)

Pin Name Function
1 VCC Power supply
2 GND Ground
3 A0 Address input 0
4 A1 Address input 1
5 A2 Address input 2
6 A3 Address input 3
7 A4 Address input 4
8 A5 Address input 5
9 A6 Address input 6
10 A7 Address input 7
11 A8 Address input 8
12 A9 Address input 9
13 A10 Address input 10
14 A11 Address input 11
15 DQ0 Data input/output 0
16 DQ1 Data input/output 1
17 DQ2 Data input/output 2
18 DQ3 Data input/output 3
19 DQ4 Data input/output 4
20 DQ5 Data input/output 5
21 DQ6 Data input/output 6
22 DQ7 Data input/output 7
23 WE# Write enable
24 OE# Output enable
25 CE# Chip enable
26 NC No connect
27 NC No connect
28 NC No connect
29 NC No connect
30 NC No connect
31 NC No connect
32 NC No connect
33 NC No connect
34 NC No connect
35 NC No connect
36 NC No connect
37 NC No connect
38 NC No connect
39 NC No connect
40 NC No connect
41 NC No connect
42 NC No connect
43 NC No connect
44 NC No connect

How to Use the CY7C1480BV25-200BZXC

The CY7C1480BV25-200BZXC is a simple and easy-to-use SRAM chip. To use the chip, simply connect the VCC pin to a 2.5 V power supply, the GND pin to ground, and the data input/output pins to the appropriate data bus. The address inputs can be connected to a decoder or other logic circuit to select the desired memory location.

CY7C1480BV25-200BZXC: A Comprehensive Guide to Static Random Access Memory (SRAM)

The CY7C1480BV25-200BZXC has three chip enable inputs (CE#, WE#, and OE#) that control the chip's operation. CE# is the chip enable input. When CE# is low, the chip is enabled and can be read from or written to. When CE# is high, the chip is disabled and no read or write operations can be performed.

Overview

Overview

WE# is the write enable input. When WE# is low, the chip is in write mode and data can be written to the selected memory location. When WE# is high, the chip is in read mode and data can be read from the selected memory location.

OE# is the output enable input. When OE# is low, the chip's output buffers are enabled and data can be read from the selected memory location. When OE# is high, the chip's output buffers are disabled and no data can be read from the chip.

CY7C1480BV25-200BZXC: A Comprehensive Guide to Static Random Access Memory (SRAM)

Tips and Tricks

Here are a few tips and tricks for using the CY7C1480BV25-200BZXC:

  • Use a decoupling capacitor between the VCC and GND pins to help reduce noise and improve performance.
  • Connect unused pins to VCC or GND to prevent floating inputs.
  • Keep the trace lengths to the chip as short as possible to minimize delays.
  • Use a logic analyzer to debug the chip's operation.

Stories and What We Learn

Here are a few stories about how the CY7C1480BV25-200BZXC has been used in real-world applications:

CY7C1480BV25-200BZXC: A Comprehensive Guide to Static Random Access Memory (SRAM)

  • In one application, the CY7C1480BV25-200BZXC was used to store the configuration data for a complex automotive system. The SRAM's fast access time and low power consumption made it an ideal choice for this application.
  • In another application, the CY7C1480BV25-200BZXC was used to buffer data between a high-speed network interface and a slower processing system. The SRAM's high capacity and fast access time made it possible to buffer large amounts of data without losing any packets.
  • In a third application, the CY7C1480BV25-200BZXC was used to store the firmware for a medical device. The SRAM's reliability and long lifespan made it an ideal choice for this critical application.

Effective Strategies

Here are a few effective strategies for using the CY7C1480BV25-200BZXC:

  • Use the chip's high speed and low power consumption to your advantage.
  • Use the chip's compact design to save space on your PCB.
  • Use the chip's flexibility to meet the specific requirements of your application.

FAQs

Here are a few frequently asked questions about the CY7C1480BV25-200BZXC:

  • Q: What is the difference between the CY7C1480BV25-200BZXC and the CY7C1480BV33-200BZXC?
  • A: The CY7C1480BV25-200BZXC operates at a voltage of 2.5 V, while the CY7C1480BV33-200BZXC operates at a voltage of 3.3 V.
  • Q: Is the CY7C1480BV25-200BZXC RoHS compliant?
  • A: Yes, the CY7C1480BV25-200BZXC is RoHS compliant.
  • **Q: Where can I find more information about the CY7C1480BV25-20
Time:2024-10-18 00:43:48 UTC

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